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Co-crystallization of trace amounts of M2+ ions with ZnSeO4 · 6H2O at 25 °CSMOLIK, Marek; KOWALIK, Anna.Journal of crystal growth. 2010, Vol 312, Num 4, pp 611-616, issn 0022-0248, 6 p.Article

Development of scintillating screens based on the single crystalline films of Ce doped (Gd,Y)3(Al,Ga,Sc)5O12 multi-component garnetsZORENKO, Yuriy; GORBENKO, Vitaliy; SAVCHYN, Volodymyr et al.Journal of crystal growth. 2014, Vol 401, pp 532-536, issn 0022-0248, 5 p.Conference Paper

Purification of tellurium to 6N+ by quadruple zone refiningMUNIRATHNAM, N. R; PRASAD, D. S; SUDHEER, Ch et al.Journal of crystal growth. 2003, Vol 254, Num 1-2, pp 262-266, issn 0022-0248, 5 p.Article

Control of silicon solidification and the impurities from an Al―Si meltPANPAN WANG; HUIMIN LU; YUANSHI LAI et al.Journal of crystal growth. 2014, Vol 390, pp 96-100, issn 0022-0248, 5 p.Article

Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification processTENG, Ying-Yang; CHEN, Jyh-Chen; HUANG, Bo-Siang et al.Journal of crystal growth. 2014, Vol 385, pp 1-8, issn 0022-0248, 8 p.Conference Paper

The influence of a small amount of maleic acid on crystal deposition phenomena of methacrylic acid in melt crystallizationHINO, Tomomichi; KATO, Shinpei; TAKIYAMA, Hiroshi et al.Journal of crystal growth. 2013, Vol 373, pp 142-145, issn 0022-0248, 4 p.Conference Paper

Investigating vaterite phase stabilisation by a tetrazole molecule during calcium carbonate crystallisationMASSI, Massimiliano; OGDEN, Mark I; JONES, Franca et al.Journal of crystal growth. 2012, Vol 351, Num 1, pp 107-114, issn 0022-0248, 8 p.Article

Phosphorus gettering of precipitated Cu in single crystalline silicon based on rapid thermal processXIAOQIANG LI; DEREN YANG; XUEGONG YU et al.Journal of crystal growth. 2010, Vol 312, Num 21, pp 3069-3074, issn 0022-0248, 6 p.Article

Diffusion of chromium in chrysoberylAHN, Yong-Kil; SEO, Jin-Gyo; PARK, Jong-Wan et al.Journal of crystal growth. 2009, Vol 311, Num 15, pp 3943-3947, issn 0022-0248, 5 p.Article

Influence of micro-impurity on protein crystal growth studied by the etch figure methodGUOLIANG DAI; XINGYU LIU; SAZAKI, Gen et al.Journal of crystal growth. 2009, Vol 311, Num 3, pp 548-552, issn 0022-0248, 5 p.Conference Paper

Lysozyme dimer association : Similarities and differences compared with lysozyme monomer associationONUMA, Kazuo; INAKA, Koji.Journal of crystal growth. 2008, Vol 310, Num 6, pp 1174-1181, issn 0022-0248, 8 p.Article

Czochralski growth of heavily tin-doped Si crystalsYONENAGA, I; TAISHI, T; INOUE, K et al.Journal of crystal growth. 2014, Vol 395, pp 94-97, issn 0022-0248, 4 p.Article

Crystal Growth of Hen Egg-White Lysozyme (HEWL) under Various Gravity ConditionsWEICHUN PAN; JIN XU; TSUKAMOTO, Katsuo et al.Journal of crystal growth. 2013, Vol 377, pp 43-50, issn 0022-0248, 8 p.Article

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growthXIN LIU; LIJUN LIU; ZAOYANG LI et al.Journal of crystal growth. 2012, Vol 354, Num 1, pp 101-108, issn 0022-0248, 8 p.Article

Systematic characterization of multi-crystalline silicon String Ribbon waferREIMANN, C; MÜLLER, G; FRIEDRICH, J et al.Journal of crystal growth. 2012, Vol 361, pp 38-43, issn 0022-0248, 6 p.Article

Rod-shaped barium sulfate particles from a completely inorganic systemRADOMIROVIC, T; OGDEN, M. I; JONES, F et al.Journal of crystal growth. 2011, Vol 321, Num 1, pp 78-84, issn 0022-0248, 7 p.Article

Coefficients, D2/1 of cocrystallization of M2+ ions with ZnSeO4 · 5H20 at 40 °C and ZnSeO4 · H20 at 50 °C and their dependences on various physicochemical and crystal-chemical factorsSMOLIK, Marek; KOWALIK, Anna; MACZKA, Konrad et al.Journal of crystal growth. 2011, Vol 337, Num 1, pp 46-51, issn 0022-0248, 6 p.Article

Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline siliconBELLMANN, M. P; MEESE, E. A; ARNBERG, L et al.Journal of crystal growth. 2011, Vol 318, Num 1, pp 239-243, issn 0022-0248, 5 p.Conference Paper

The distribution of impurities in lysozyme crystalsSCHUTT, Kelly J; GOSAVI, Rajendrakumar A; WHITE, Donald B et al.Journal of crystal growth. 2009, Vol 311, Num 16, pp 4062-4068, issn 0022-0248, 7 p.Article

A kinetic model of the formation and growth of interstitial dislocation loops in dislocation free silicon single crystalsTALANIN, V. I; TALANIN, I. E.Journal of crystal growth. 2012, Vol 346, Num 1, pp 45-49, issn 0022-0248, 5 p.Article

Factors influencing the purity of electronic grade phosphine delivered to MOCVD toolsJUN FENG; OWENS, Mitch; RAYNOR, Mark W et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1334-1339, issn 0022-0248, 6 p.Conference Paper

Modeling of sucrose crystallization kinetics : The influence of glucose and fructoseOUIAZZANE, S; MESSNAOUI, B; ABDERAFI, S et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3498-3503, issn 0022-0248, 6 p.Article

Mechanism of specific influence of L-Glutamic acid on the shape of L-Valine crystalsYOSHIURA, Hiromu; NAGANO, Hiroshi; HIRASAWA, Izumi et al.Journal of crystal growth. 2013, Vol 363, pp 55-60, issn 0022-0248, 6 p.Article

Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufactureNAKANO, S; GAO, B; KAKIMOTO, K et al.Journal of crystal growth. 2013, Vol 375, pp 62-66, issn 0022-0248, 5 p.Article

Effect of crucible rotation on oxygen concentration in the polycrystalline silicon grown by the unidirectional solidification methodNAKANO, S; LIU, L. J; CHEN, X. J et al.Journal of crystal growth. 2009, Vol 311, Num 4, pp 1051-1055, issn 0022-0248, 5 p.Article

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